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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD860 description c ollector-emitter breakdown voltage- : v (br)ceo = 250v(min) high collector power dissipation applications designed for af power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 350 v v ceo collector-emitter voltage 250 v v ebo emitter-base voltage 5 v i c collector current-continuous 1 a i cm collector current-peak 2 a p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD860 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 30ma; i b = 0 250 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.4a b 1.0 v v be( on ) base-emitter on voltage i c = 2a; v ce = 10v 1.5 v i ceo collector cutoff current v ce = 150v; i b = 0 1 ma i ces collector cutoff current v ce = 350v; v be = 0 1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1 ma h fe-1 dc current gain i c = 0.3a; v ce = 10v 40 250 h fe-2 dc current gain i c = 2a; v ce = 10v 10 switching times t on turn-on time 0.2 s t off turn-off time i c = 2a; i b1 = -i b2 = 0.2a 2.0 s ? h fe- 1 classifications r q p 40-90 70-150 120-250 isc website www.iscsemi.cn 2 |
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